MOSFET N-CH 30V 500MA PPAK 0806
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 1.46Ohm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.6 nC @ 4.5 V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 17 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 1.25W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® 0806 |
Package / Case: | PowerPAK® 0806 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RFD20N03SMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHF7N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 7A TO220 |
|
AOI4185Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 40V 40A TO251A |
|
NTHL082N65S3FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 40A TO247-3 |
|
FDP8876Rochester Electronics |
MOSFET N-CH 30V 70A TO220-3 |
|
STU8N80K5STMicroelectronics |
MOSFET N-CH 800V 6A TO251 |
|
STFW42N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 34A ISOWATT |
|
IPW65R280C6Rochester Electronics |
650 V COOLMOS E6 POWER MOSFET |
|
SQP120N06-6M7_GE3Vishay / Siliconix |
MOSFET N-CH 60V TO220AB |
|
IRF133Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPP075N15N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 150V 100A TO220-3 |
|
PSMN2R4-30MLDXNexperia |
MOSFET N-CH 30V 70A LFPAK33 |
|
FDPF18N20FT-GRochester Electronics |
MOSFET N-CH 200V 18A TO220F |