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NVMYS1D2N04CLTWG

NVMYS1D2N04CLTWG

MOSFET N-CH 40V 44A/258A LFPAK4

NVMYS1D2N04CLTWG

NVMYS1D2N04CLTWG

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Part No :

NVMYS1D2N04CLTWG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 40V 44A/258A LFPAK4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:44A (Ta), 258A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:109 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6330 pF @ 20 V
FET Feature:-
Power Dissipation (Max):3.9W (Ta), 134W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK4 (5x6)
Package / Case:SOT-1023, 4-LFPAK
NVMYS1D2N04CLTWG is available at GangBo-ic.com, Please review product page below for detailed information, including NVMYS1D2N04CLTWG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NVMYS1D2N04CLTWG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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