MOSFET N-CH 24V 80A IPAK
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 24 V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.8mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 42 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2.6 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 75W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDD5N50TMRochester Electronics |
4A, 500V, 1.4OHM, N-CHANNEL POWE |
|
IRF121Rochester Electronics |
MOSFET N-CH 60V 8A TO204AA |
|
SFU9034TURochester Electronics |
P-CHANNEL POWER MOSFET |
|
BSS119NH7796Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SQJ858AEP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 58A PPAK SO-8 |
|
AOT22N50LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 22A TO220 |
|
IPD90N04S40-4ATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FCPF190N65FL1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 20.6A TO220F |
|
SIHD7N60ET4-GE3Vishay / Siliconix |
MOSFET N-CH 600V 7A TO252AA |
|
HUF76609D3_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SFR9014TFRochester Electronics |
MOSFET P-CH 60V 5.3A DPAK |
|
IXTA08N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 800MA TO263 |
|
FDD8878Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A/40A TO252AA |