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FCPF190N65FL1

FCPF190N65FL1

Image is for reference, please contact us to get the real picture

Part No :

FCPF190N65FL1

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 650V 20.6A TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
103210 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
FCPF190N65FL1 PDF
Type Description
Series:SuperFET® II
Package:Tube
Part Status:Last Time Buy
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:78 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3055 pF @ 100 V
FET Feature:-
Power Dissipation (Max):39W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
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