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IPB80P04P4L08ATMA2

IPB80P04P4L08ATMA2

MOSFET P-CH 40V 80A TO263-3

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IPB80P04P4L08ATMA2

IPB80P04P4L08ATMA2

Image is for reference, please contact us to get the real picture

Part No :

IPB80P04P4L08ATMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 40V 80A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10169 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
Type Description
Series:OptiMOS®-P2
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2.2V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds:5430 pF @ 25 V
FET Feature:-
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB80P04P4L08ATMA2 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB80P04P4L08ATMA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB80P04P4L08ATMA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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