MOSFET P-CH 30V 250MA SOT323
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 250mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.4Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.2 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 51.16 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 300mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NVMFS5C410NWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 46A/300A 5DFN |
|
STB18N60DM2STMicroelectronics |
MOSFET N-CH 600V 12A D2PAK |
|
BSP92PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 250V 260MA SOT223-4 |
|
STD60N55F3STMicroelectronics |
MOSFET N-CH 55V 80A DPAK |
|
TSM4NB65CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 650V 4A TO251 |
|
IPW60R099CPAFKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 31A TO247-3 |
|
R5011FNXROHM Semiconductor |
MOSFET N-CH 500V 11A TO-220FM |
|
NVD6824NLT4G-VF01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 8.5A/41A DPAK |
|
STK800STMicroelectronics |
MOSFET N-CH 30V 20A POLARPAK |
|
BUK9M15-60EXNexperia |
MOSFET N-CH 60V 47A LFPAK33 |
|
FQI7N80TURochester Electronics |
MOSFET N-CH 800V 6.6A I2PAK |
|
STP7NK40ZFPSTMicroelectronics |
MOSFET N-CH 400V 5.4A TO220FP |
|
NTD3055L170-001Rochester Electronics |
MOSFET N-CH 60V 9A IPAK |