MOSFET N-CH 500V 21A TO220AB
Type | Description |
---|---|
Series: | MDmesh™ II |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 158mOhm @ 10.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 1735 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 150W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPB80N06S209ATMA1Rochester Electronics |
MOSFET N-CH 55V 80A TO263-3-2 |
|
IRFR1205TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 44A DPAK |
|
TPH3R704PC,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 82A 8SOP |
|
DMP2045UFY4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.7A X2-DFN2015 |
|
RU1C001UNTCLROHM Semiconductor |
MOSFET N-CH 20V 100MA UMT3F |
|
FDS3672Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 7.5A 8SOIC |
|
PMV160UP,215Nexperia |
MOSFET P-CH 20V 1.2A TO236AB |
|
FQPF8N60CFTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 6.26A TO220F |
|
STF35N65M5STMicroelectronics |
MOSFET N-CH 650V 27A TO220FP |
|
IPB80P04P4L08ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 80A TO263-3 |
|
DMT10H010LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 11.5A/29.5A 8SO |
|
MCH6424-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
DMTH10H009SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V PWRDI5060 |