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IPD90R1K2C3ATMA2

IPD90R1K2C3ATMA2

MOSFET N-CH 900V 2.1A TO252-3

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IPD90R1K2C3ATMA2

IPD90R1K2C3ATMA2

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Part No :

IPD90R1K2C3ATMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 900V 2.1A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
262926 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
Type Description
Series:CoolMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id:3.5V @ 0.31mA
Gate Charge (Qg) (Max) @ Vgs:3.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 100 V
FET Feature:-
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD90R1K2C3ATMA2 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD90R1K2C3ATMA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD90R1K2C3ATMA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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