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FQB17N08TM

FQB17N08TM

MOSFET N-CH 80V 16.5A D2PAK

FQB17N08TM

FQB17N08TM

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Part No :

FQB17N08TM

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 80V 16.5A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12400 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
FQB17N08TM PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:115mOhm @ 8.25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 65W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB17N08TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB17N08TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB17N08TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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