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RT1210FRD0760K4L

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IPW60R190P6

IPW60R190P6

MOSFET N-CH 600V 20.2A TO247

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IPW60R190P6

IPW60R190P6

Image is for reference, please contact us to get the real picture

Part No :

IPW60R190P6

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 20.2A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
902890 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
Type Description
Series:CoolMOS™ P6
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:190mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1750 pF @ 100 V
FET Feature:-
Power Dissipation (Max):151W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247
Package / Case:TO-247-3
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