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2SK4177-DL-1E

2SK4177-DL-1E

POWER FIELD-EFFECT TRANSISTOR, 2

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2SK4177-DL-1E

2SK4177-DL-1E

Image is for reference, please contact us to get the real picture

Part No :

2SK4177-DL-1E

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10486 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
2SK4177-DL-1E PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1.5 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:37.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 30 V
FET Feature:-
Power Dissipation (Max):80W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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