DIODE ZENER 8.2V 500MW DO35
Type | Description |
---|---|
Series: | Military, MIL-PRF-19500/127 |
Package: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 8.2 V |
Tolerance: | ±2% |
Power - Max: | 500 mW |
Impedance (Max) (Zzt): | 8 Ohms |
Current - Reverse Leakage @ Vr: | 1 µA @ 6 V |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 200 mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
CZRA5941B-GComchip Technology |
DIODE ZENER 47V 1.5W DO214AC |
![]() |
JAN1N3822AUR-1Roving Networks / Microchip Technology |
DIODE ZENER 3.6V 1W DO213AB |
![]() |
BZX384B6V2-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 200MW SOD323 |
![]() |
1PMT5954E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 160V 3W DO216AA |
![]() |
1M150ZHR0GTSC (Taiwan Semiconductor) |
DIODE ZENER 150V 1W DO204AL |
![]() |
JANTX1N4622C-1Roving Networks / Microchip Technology |
DIODE ZENER 3.9V 500MW DO35 |
![]() |
BZD27B5V1P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 800MW DO219AB |
![]() |
1N3346ARoving Networks / Microchip Technology |
DIODE ZENER 150V 50W DO5 |
![]() |
BZV55-B16,115Nexperia |
DIODE ZENER 16V 500MW LLDS |
![]() |
1N4757AHB0GTSC (Taiwan Semiconductor) |
DIODE ZENER 51V 1W DO204AL |
![]() |
TLZ3V9-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 500MW SOD80 |
![]() |
BZG05B3V9-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 1.25W DO214AC |
![]() |
JANTX1N4133DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 87V 500MW DO213AA |