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MOSFET N-CH 55V 77A TO263-3

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IPB77N06S212ATMA2

IPB77N06S212ATMA2

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Part No :

IPB77N06S212ATMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 55V 77A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
912391 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 04 - Apr 08 2025
PDF
IPB77N06S212ATMA2 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:77A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11.7mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1770 pF @ 25 V
FET Feature:-
Power Dissipation (Max):158W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB77N06S212ATMA2 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB77N06S212ATMA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB77N06S212ATMA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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