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IRF7739L2TRPBF

IRF7739L2TRPBF

DIRECTFET POWER MOSFET

IRF7739L2TRPBF

IRF7739L2TRPBF

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Part No :

IRF7739L2TRPBF

Manufacturer
Rochester Electronics
Description
DIRECTFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
40804 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 20 - Feb 24 2025
PDF
IRF7739L2TRPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:46A (Ta), 375A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1mOhm @ 160A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:330 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11.88 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET L8
Package / Case:DirectFET™ Isometric L8
IRF7739L2TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF7739L2TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF7739L2TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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