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ISP25DP06NMXTSA1

ISP25DP06NMXTSA1

MOSFET P-CH 60V 1.9A SOT223-4

ISP25DP06NMXTSA1

ISP25DP06NMXTSA1

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Part No :

ISP25DP06NMXTSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 60V 1.9A SOT223-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
152115 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 22 - Feb 26 2025
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id:4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:10.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 30 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta), 4.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
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