MOSFET N-CH 100V 110A TO268
CONN TERM BLK GROUND 8-24 AWG
DC DC CONVERTER 3.3V 264W
Type | Description |
---|---|
Series: | PolarHT™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 15mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 110 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3550 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 480W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
IPB014N06NATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 34A/180A TO263-7 |
![]() |
FQI6N60CTURochester Electronics |
MOSFET N-CH 600V 5.5A I2PAK |
![]() |
FQD7N20LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 5.5A DPAK |
![]() |
STD7NM80STMicroelectronics |
MOSFET N-CH 800V 6.5A DPAK |
![]() |
DMN53D0LQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 500MA SOT23 |
![]() |
IAUC100N04S6L020ATMA1IR (Infineon Technologies) |
IAUC100N04S6L020ATMA1 |
![]() |
IPA60R280CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6A TO220 |
![]() |
STF24NM60NSTMicroelectronics |
MOSFET N-CH 600V 17A TO220FP |
![]() |
IRFBF30STRLPBFVishay / Siliconix |
MOSFET N-CH 900V 3.6A TO263 |
![]() |
YJL3400A-F2-0000HF |
N-CH MOSFET 30V 5.6A SOT-23-3L |
![]() |
BUK9Y38-100E,115Nexperia |
MOSFET N-CH 100V 30A LFPAK56 |
![]() |
BUK7Y07-30B,115Nexperia |
MOSFET N-CH 30V 75A LFPAK56 |
![]() |
IRFM120ATFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 2.3A SOT223-4 |