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IRFM120ATF

IRFM120ATF

Image is for reference, please contact us to get the real picture

Part No :

IRFM120ATF

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 2.3A SOT223-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14668 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 21 - Feb 25 2025
PDF
IRFM120ATF PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:200mOhm @ 1.15A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
IRFM120ATF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFM120ATF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFM120ATF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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