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IXTY1R4N100P

IXTY1R4N100P

MOSFET N-CH 1000V 1.4A TO252

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IXTY1R4N100P

IXTY1R4N100P

Image is for reference, please contact us to get the real picture

Part No :

IXTY1R4N100P

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 1000V 1.4A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
661966 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 05 - Apr 09 2025
PDF
IXTY1R4N100P PDF
Type Description
Series:Polar™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:17.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 25 V
FET Feature:-
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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