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NTE4151PT1G

NTE4151PT1G

MOSFET P-CH 20V 760MA SC89-3

NTE4151PT1G

NTE4151PT1G

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Part No :

NTE4151PT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 20V 760MA SC89-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12210 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 22 - Feb 26 2025
PDF
NTE4151PT1G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:760mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:360mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.1 nC @ 4.5 V
Vgs (Max):±6V
Input Capacitance (Ciss) (Max) @ Vds:156 pF @ 5 V
FET Feature:-
Power Dissipation (Max):313mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-89-3
Package / Case:SC-89, SOT-490
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