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SIHD1K4N60E-GE3

SIHD1K4N60E-GE3

MOSFET N-CH 600V 4.2A TO252AA

SIHD1K4N60E-GE3

SIHD1K4N60E-GE3

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Part No :

SIHD1K4N60E-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 600V 4.2A TO252AA
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12963 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
Type Description
Series:E
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.45Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:172 pF @ 100 V
FET Feature:-
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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