MOSFET N-CH 600V 22A TO220-3
SMA-RJB/HDBNC-SJB G316 0.75M
Type | Description |
---|---|
Series: | CoolMOS™ C7 |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 99mOhm @ 9.7A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 490µA |
Gate Charge (Qg) (Max) @ Vgs: | 42 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1819 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 110W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3-1 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STF3N62K3STMicroelectronics |
MOSFET N-CH 620V 2.7A TO220FP |
|
IPB50R140CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 550V 23A TO263-3 |
|
IXFP36N20X3MWickmann / Littelfuse |
MOSFET N-CH 200V 36A TO220 |
|
IPP60R060P7XKSA1Rochester Electronics |
IPP60R060 - 600V COOLMOS N-CHANN |
|
SI7113DN-T1-E3Vishay / Siliconix |
MOSFET P-CH 100V 13.2A PPAK |
|
FDS3682_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF7468PBFRochester Electronics |
MOSFET N-CH 40V 9.4A 8SO |
|
IXTH90P10PWickmann / Littelfuse |
MOSFET P-CH 100V 90A TO247 |
|
RAQ045P01TCRROHM Semiconductor |
MOSFET P-CH 12V 4.5A TSMT6 |
|
BTS282ZE3180ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMTH6016LFVWQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 41A POWERDI3333 |
|
RM15P60LDRectron USA |
MOSFET P-CHANNEL 60V 13A TO252-2 |
|
FDS2070N7Rochester Electronics |
MOSFET N-CH 150V 4.1A 8SO |