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IGT60R190D1SATMA1

IGT60R190D1SATMA1

GANFET N-CH 600V 12.5A 8HSOF

IGT60R190D1SATMA1

IGT60R190D1SATMA1

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Part No :

IGT60R190D1SATMA1

Manufacturer
IR (Infineon Technologies)
Description
GANFET N-CH 600V 12.5A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
531853 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
Type Description
Series:CoolGaN™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-10V
Input Capacitance (Ciss) (Max) @ Vds:157 pF @ 400 V
FET Feature:-
Power Dissipation (Max):55.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-3
Package / Case:8-PowerSFN
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