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FQU2N60TU

FQU2N60TU

MOSFET N-CH 600V 2A IPAK

FQU2N60TU

FQU2N60TU

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Part No :

FQU2N60TU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 2A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10164 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
FQU2N60TU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
FQU2N60TU is available at GangBo-ic.com, Please review product page below for detailed information, including FQU2N60TU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQU2N60TU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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