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PSMN6R1-30YLD115

PSMN6R1-30YLD115

N-CHANNEL POWER MOSFET

PSMN6R1-30YLD115

PSMN6R1-30YLD115

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Part No :

PSMN6R1-30YLD115

Manufacturer
Rochester Electronics
Description
N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
141614 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 29 - Jan 02 2024
Type Description
Series:*
Package:Bulk
Part Status:Active
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:-
Supplier Device Package:-
Package / Case:-
PSMN6R1-30YLD115 is available at GangBo-ic.com, Please review product page below for detailed information, including PSMN6R1-30YLD115 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for PSMN6R1-30YLD115 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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  • PSMN6R1-30YLD115 Price
  • PSMN6R1-30YLD115 Series
  • PSMN6R1-30YLD115 Datasheet
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  • PSMN6R1-30YLD115 Pdf
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  • PSMN6R1-30YLD115 Features
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