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STB13N60M2

STB13N60M2

MOSFET N-CH 600V 11A D2PAK

STB13N60M2

STB13N60M2

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Part No :

STB13N60M2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 11A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
36992 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 25 - Dec 29 2024
PDF
STB13N60M2 PDF
Type Description
Series:MDmesh™ II Plus
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:580 pF @ 100 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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