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SIHH21N65E-T1-GE3

SIHH21N65E-T1-GE3

MOSFET N-CH 650V 20.3A PPAK 8X8

SIHH21N65E-T1-GE3

SIHH21N65E-T1-GE3

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Part No :

SIHH21N65E-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 650V 20.3A PPAK 8X8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12888 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 26 - Dec 30 2024
PDF
SIHH21N65E-T1-GE3 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:170mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:99 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2404 pF @ 100 V
FET Feature:-
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 8 x 8
Package / Case:8-PowerTDFN
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