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SIHD2N80E-GE3

SIHD2N80E-GE3

MOSFET N-CH 800V 2.8A DPAK

SIHD2N80E-GE3

SIHD2N80E-GE3

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Part No :

SIHD2N80E-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 800V 2.8A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
621362 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 22 - Dec 26 2024
PDF
SIHD2N80E-GE3 PDF
Type Description
Series:E
Package:Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.75Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:315 pF @ 100 V
FET Feature:-
Power Dissipation (Max):62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252AA)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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