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FDFC3N108

FDFC3N108

MOSFET N-CH 20V 3A SUPERSOT6

FDFC3N108

FDFC3N108

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Part No :

FDFC3N108

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 20V 3A SUPERSOT6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
98521 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 20 - Dec 24 2024
PDF
FDFC3N108 PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:70mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.9 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:355 pF @ 10 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
FDFC3N108 is available at GangBo-ic.com, Please review product page below for detailed information, including FDFC3N108 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDFC3N108 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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