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IPD26N06S2L35ATMA2

IPD26N06S2L35ATMA2

MOSFET N-CH 55V 30A TO252-31

R3114K321A-TR

R3114K321A-TR

IC SUPERVISOR 1 CHANNEL 4DFN

IPD26N06S2L35ATMA2

IPD26N06S2L35ATMA2

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Part No :

IPD26N06S2L35ATMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 55V 30A TO252-31
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11164 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
IPD26N06S2L35ATMA2 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:35mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:2V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:621 pF @ 25 V
FET Feature:-
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD26N06S2L35ATMA2 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD26N06S2L35ATMA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD26N06S2L35ATMA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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