MOSFET N-CH 650V 13.7A TO247
Type | Description |
---|---|
Series: | DTMOSIV |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 13.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 300mOhm @ 6.9A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 690µA |
Gate Charge (Qg) (Max) @ Vgs: | 40 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1300 pF @ 300 V |
FET Feature: | - |
Power Dissipation (Max): | 130W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IXFK200N10PWickmann / Littelfuse |
MOSFET N-CH 100V 200A TO264AA |
|
FDMA530PZRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
STF7N52K3STMicroelectronics |
MOSFET N-CH 525V 6A TO220FP |
|
SIR165DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 60A PPAK SO-8 |
|
ZVN3320FTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 200V 60MA SOT23-3 |
|
IRF640NSTRRPBFRochester Electronics |
IRF640 - HEXFET POWER MOSFET |
|
SQ4840EY-T1_BE3Vishay / Siliconix |
MOSFET N-CH 40V 20.7A 8SOIC |
|
STB11NM80T4STMicroelectronics |
MOSFET N-CH 800V 11A D2PAK |
|
AUIRLS8409-7PIR (Infineon Technologies) |
MOSFET N-CH 40V 240A D2PAK |
|
FDS86106Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 3.4A 8SOIC |
|
IPP80N04S304AKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTTFS4C05NTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12A/75A 8WDFN |
|
IRFI7536GPBF-IRRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |