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IRF640NSTRRPBF

IRF640NSTRRPBF

IRF640 - HEXFET POWER MOSFET

IRF640NSTRRPBF

IRF640NSTRRPBF

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Part No :

IRF640NSTRRPBF

Manufacturer
Rochester Electronics
Description
IRF640 - HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
131213 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 18 - Nov 22 2024
PDF
IRF640NSTRRPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.16 pF @ 25 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF640NSTRRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF640NSTRRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF640NSTRRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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