MOSFET N-CH 250V 120A TO264
Type | Description |
---|---|
Series: | PolarHT™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250 V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 24mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: | 185 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 8000 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 700W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-264 (IXTK) |
Package / Case: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF1404ZPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 180A TO220AB |
|
SIHG080N60E-GE3Vishay / Siliconix |
E SERIES POWER MOSFET TO-247AC, |
|
IXTQ30N60PWickmann / Littelfuse |
MOSFET N-CH 600V 30A TO3P |
|
IPI65R380C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10.6A TO262-3 |
|
RS1E300GNTBROHM Semiconductor |
MOSFET N-CH 30V 30A 8-HSOP |
|
IRFR3411TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 32A DPAK |
|
CSD16340Q3TTexas Instruments |
MOSFET N-CH 25V 60A 8VSON |
|
IMW65R048M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
|
MMFTN123Diotec Semiconductor |
MOSFET N-CH 100V 170MA SOT23-3 |
|
IPP65R280E6XKSA1Rochester Electronics |
MOSFET N-CH 650V 13.8A TO220-3 |
|
MMBF2201NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 300MA SC70-3 |
|
PSMN130-200D,118Nexperia |
MOSFET N-CH 200V 20A DPAK |
|
TK14N65W5,S1FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 13.7A TO247 |