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NVMFD6H852NLWFT1G

NVMFD6H852NLWFT1G

MOSFET N-CH 80V 7A/25A 8DFN DL

NVMFD6H852NLWFT1G

NVMFD6H852NLWFT1G

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Part No :

NVMFD6H852NLWFT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 80V 7A/25A 8DFN DL
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 20 - Dec 24 2024
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:25.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:521 pF @ 40 V
FET Feature:-
Power Dissipation (Max):3.2W (Ta), 38W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
Package / Case:8-PowerTDFN
NVMFD6H852NLWFT1G is available at GangBo-ic.com, Please review product page below for detailed information, including NVMFD6H852NLWFT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NVMFD6H852NLWFT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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