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SI2367DS-T1-GE3

SI2367DS-T1-GE3

MOSFET P-CH 20V 3.8A SOT23-3

1417817

1417817

SAC-3P- 0 3-PVC/A

SI2367DS-T1-GE3

SI2367DS-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SI2367DS-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 3.8A SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
18601 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 17 - Feb 21 2025
PDF
SI2367DS-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:66mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:561 pF @ 10 V
FET Feature:-
Power Dissipation (Max):960mW (Ta), 1.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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