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IMW65R027M1HXKSA1

IMW65R027M1HXKSA1

MOSFET 650V NCH SIC TRENCH

IMW65R027M1HXKSA1

IMW65R027M1HXKSA1

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Part No :

IMW65R027M1HXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 650V NCH SIC TRENCH
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10235 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 11 - Jun 15 2024
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:-
Supplier Device Package:-
Package / Case:-
IMW65R027M1HXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IMW65R027M1HXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IMW65R027M1HXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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  • IMW65R027M1HXKSA1 Price
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  • IMW65R027M1HXKSA1 Features
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