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FQP12N60

FQP12N60

MOSFET N-CH 600V 10.5A TO220-3

IL 711-3E

IL 711-3E

DGTL ISO 2500VRMS 2CH GP 8SOIC

FQP12N60

FQP12N60

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Part No :

FQP12N60

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 10.5A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19664 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
FQP12N60 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:700mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.9 pF @ 25 V
FET Feature:-
Power Dissipation (Max):180W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FQP12N60 is available at GangBo-ic.com, Please review product page below for detailed information, including FQP12N60 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQP12N60 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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