MOSFET P-CH 200V 2.8A D2PAK
Type | Description |
---|---|
Series: | QFET® |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.7Ohm @ 1.4A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 250 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 3.13W (Ta), 52W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
XP152A11E5MR-GTorex Semiconductor Ltd. |
MOSFET P-CH 30V 700MA SOT23 |
|
STL38N65M5STMicroelectronics |
MOSFET N-CH 650V PWRFLAT HV |
|
FQD5N20LTFRochester Electronics |
MOSFET N-CH 200V 3.8A DPAK |
|
FQI5N15TURochester Electronics |
MOSFET N-CH 150V 5.4A I2PAK |
|
GKI07301Sanken Electric Co., Ltd. |
MOSFET N-CH 75V 6A 8DFN |
|
SI2367DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 3.8A SOT23-3 |
|
STL42N65M5STMicroelectronics |
MOSFET N-CH 650V 4A PWRFLAT HV |
|
SUG80050E-GE3Vishay / Siliconix |
MOSFET N-CH 150V 100A TO247AC |
|
NTP22N06LRochester Electronics |
MOSFET N-CH 60V 22A TO220AB |
|
IMW65R027M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
|
IRFS3004TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 40V 240A D2PAK |
|
SQJ431EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 200V 12A PPAK SO-8 |
|
NTHL080N120SC1Sanyo Semiconductor/ON Semiconductor |
SICFET N-CH 1200V 44A TO247-3 |