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STP11NM60

STP11NM60

MOSFET N-CH 650V 11A TO220AB

STP11NM60

STP11NM60

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Part No :

STP11NM60

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V 11A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10449 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 31 - Jan 04 2024
PDF
STP11NM60 PDF
Type Description
Series:MDmesh™
Package:Tube
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 25 V
FET Feature:-
Power Dissipation (Max):160W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
STP11NM60 is available at GangBo-ic.com, Please review product page below for detailed information, including STP11NM60 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STP11NM60 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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