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IRF135S203

IRF135S203

MOSFET N-CH 135V 129A TO263-3

IRF135S203

IRF135S203

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Part No :

IRF135S203

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 135V 129A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
280828 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 27 - Dec 31 2024
PDF
IRF135S203 PDF
Type Description
Series:HEXFET®, StrongIRFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):135 V
Current - Continuous Drain (Id) @ 25°C:129A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.4mOhm @ 77A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:270 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9700 pF @ 50 V
FET Feature:-
Power Dissipation (Max):441W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF135S203 is available at GangBo-ic.com, Please review product page below for detailed information, including IRF135S203 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF135S203 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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