MOSFET P-CH 20V 3.5A MICROFET
Type | Description |
---|---|
Series: | PowerTrench® |
Package: | Bulk |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 140mOhm @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4 nC @ 4.5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 280 pF @ 10 V |
FET Feature: | Schottky Diode (Isolated) |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | MicroFET 3x3mm |
Package / Case: | 6-WDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
HUFA75329D3Rochester Electronics |
MOSFET N-CH 55V 20A IPAK |
|
IPB80N04S404ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO263-3-2 |
|
FDZ208PRochester Electronics |
MOSFET P-CH 30V 12.5A 30BGA |
|
BSO051N03MS GIR (Infineon Technologies) |
MOSFET N-CH 30V 14A 8DSO |
|
RTE002P02TLROHM Semiconductor |
MOSFET P-CH 20V 200MA EMT3 |
|
SPP08N80C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 8A TO220-3 |
|
SPD09P06PLGBTMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 9.7A TO252-3 |
|
IRFR3410PBFRochester Electronics |
MOSFET N-CH 100V 31A DPAK |
|
IRFH5053TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 9.3A/46A PQFN |
|
DMT3006LFVQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 60A POWERDI3333 |
|
HUFA76633S3SRochester Electronics |
MOSFET N-CH 100V 39A D2PAK |
|
UJ3C065030T3SUnitedSiC |
MOSFET N-CH 650V 85A TO220-3 |
|
RM3N700S4Rectron USA |
MOSFET N-CHANNEL 700V 3A SOT223 |