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IRFB260NPBF

IRFB260NPBF

MOSFET N-CH 200V 56A TO220AB

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IRFB260NPBF

IRFB260NPBF

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Part No :

IRFB260NPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 56A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
200820 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 10 - Apr 14 2025
PDF
IRFB260NPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:220 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4220 pF @ 25 V
FET Feature:-
Power Dissipation (Max):380W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRFB260NPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFB260NPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFB260NPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

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Phone: 00852-52612101

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