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IPL60R199CPAUMA1

IPL60R199CPAUMA1

MOSFET N-CH 650V 16.4A 4VSON

IPL60R199CPAUMA1

IPL60R199CPAUMA1

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Part No :

IPL60R199CPAUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 16.4A 4VSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
990799 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
IPL60R199CPAUMA1 PDF
Type Description
Series:CoolMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:16.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id:3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1520 pF @ 100 V
FET Feature:-
Power Dissipation (Max):139W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-VSON-4
Package / Case:4-PowerTSFN
IPL60R199CPAUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPL60R199CPAUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPL60R199CPAUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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