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IRF40H210

IRF40H210

MOSFET N-CH 40V 100A 8PQFN

IRF40H210

IRF40H210

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Part No :

IRF40H210

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 40V 100A 8PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17883 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 26 - Dec 30 2024
PDF
IRF40H210 PDF
Type Description
Series:HEXFET®, StrongIRFET™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:152 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5.406 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerVDFN
IRF40H210 is available at GangBo-ic.com, Please review product page below for detailed information, including IRF40H210 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF40H210 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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