MOSFET N-CH 60V 60A TO252-4L
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 12mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 35.2 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1926 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252-4L |
Package / Case: | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPU60R600C6BKMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 7.3A TO251-3 |
|
PSMN130-200D,118-NEXRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
BUK9245-55A,118Rochester Electronics |
TRANSISTOR >30MHZ |
|
IPP16CN10LGXKSA1Rochester Electronics |
MOSFET N-CH 100V 54A TO220-3 |
|
FDD9510L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 50A DPAK |
|
G3R160MT17DGeneSiC Semiconductor |
SIC MOSFET N-CH 21A TO247-3 |
|
BTS282ZE3180ANTMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSS138BKW/DG/B2135Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IPL60R199CPAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 16.4A 4VSON |
|
BSC035N04LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 21A/100A TDSON |
|
NTTFS5C453NLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 23A/107A 8WDFN |
|
FDMS86252Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 4.6A/16A 8PQFN |
|
APT1001RBVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 11A TO247 |