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SI8823EDB-T2-E1

SI8823EDB-T2-E1

Image is for reference, please contact us to get the real picture

Part No :

SI8823EDB-T2-E1

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 2.7A 4MICRO FOOT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15282 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 21 - Feb 25 2025
PDF
SI8823EDB-T2-E1 PDF
Type Description
Series:TrenchFET® Gen III
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:95mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:580 pF @ 10 V
FET Feature:-
Power Dissipation (Max):900mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-MICRO FOOT® (0.8x0.8)
Package / Case:4-XFBGA
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