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IPI020N06NAKSA1

IPI020N06NAKSA1

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Part No :

IPI020N06NAKSA1

Manufacturer
Rochester Electronics
Description
OPTLMOS N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
20420 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IPI020N06NAKSA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:29A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.8V @ 143µA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7.8 pF @ 30 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IPI020N06NAKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPI020N06NAKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPI020N06NAKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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