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IPB70N10S3L12ATMA1

IPB70N10S3L12ATMA1

MOSFET N-CH 100V 70A TO263-3

D3C2327N-5

D3C2327N-5

2.30 - 2.70 GHZ CIRCULATOR

IPB70N10S3L12ATMA1

IPB70N10S3L12ATMA1

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Part No :

IPB70N10S3L12ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 70A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16848 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
IPB70N10S3L12ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11.8mOhm @ 70A, 10V
Vgs(th) (Max) @ Id:2.4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5550 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB70N10S3L12ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB70N10S3L12ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB70N10S3L12ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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