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RFD4N06LSM9A

RFD4N06LSM9A

MOSFET N-CH 60V 4A TO252AA

2890-16J

2890-16J

FIXED IND 6.8UH 640MA 1.05 OHM

RFD4N06LSM9A

RFD4N06LSM9A

Image is for reference, please contact us to get the real picture

Part No :

RFD4N06LSM9A

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 4A TO252AA
Catalog
Transistors - FETs, MOSFETs - Single
Availability
67132 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 26 - Sep 30 2024
PDF
RFD4N06LSM9A PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:600mOhm @ 1A, 5V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 10 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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