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MOSFET N-CH 100V 10A TO252AA

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HUFA76609D3ST

HUFA76609D3ST

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Part No :

HUFA76609D3ST

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 10A TO252AA
Catalog
Transistors - FETs, MOSFETs - Single
Availability
241904 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 10 - Nov 14 2025
PDF
HUFA76609D3ST PDF
Type Description
Series:UltraFET™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:160mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:425 pF @ 25 V
FET Feature:-
Power Dissipation (Max):49W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA76609D3ST is available at GangBo-ic.com, Please review product page below for detailed information, including HUFA76609D3ST price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HUFA76609D3ST to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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