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FQAF8N80

FQAF8N80

MOSFET N-CH 800V 5.9A TO3PF

FQAF8N80

FQAF8N80

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Part No :

FQAF8N80

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 800V 5.9A TO3PF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10557 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
PDF
FQAF8N80 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.95A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2.35 pF @ 25 V
FET Feature:-
Power Dissipation (Max):107W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PF
Package / Case:TO-3P-3 Full Pack
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